MOSFETs

A MOSFET is a field effect transistor (it uses an electric field to control current flow) fabricated as a metal oxide semiconductor, the most widely used production technology. In the power MOSFET field, silicon carbide (SiC) is also used, as it is ideal for higher performance and efficiency required for power supplies, inverters and other applications. Toshiba has developed and produced of MOSFETs for many years, and our extensive lineup or low medium and high withstand voltage devices deliver features that include low loss, high speed, low on-resistance and small packages—a MOSFET for every application.

Lineup

12V - 300V MOSFETs
Toshiba has used each successive generation of trench-gate structures and fabrication processes to steadily reduce the drain-source on-resistance, RDS(ON), of its low-voltage power MOSFETs.
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400V - 900V MOSFETs
Toshiba offers super-junction MOSFET series suitable for high-output power supply applications and D-MOS (double-diffused) MOSFET series suitable for low-output power supply applications.
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Automotive MOSFETs
Toshiba offers an extensive line of power devices such as power MOSFETs for various automotive applications, including 12V battery and motor control systems.
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MOSFET Gate Driver ICs
Toshiba MOSFET Gate Driver ICs are very small N-channel MOSFET drivers with protection circuits. With external N-channel MOSFET, this solution acheives small size and low loss power line.
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SiC MOSFETs
Toshiba’s 1200V SiC MOSFET offers high-speed switching and low ON-resistance making it excellent for high-power, high-efficiency industrial power supplies, low-loss solar inverters and UPS.
Details
SiC MOSFET Modules
Our SiC MOSFET modules have high-speed switching properties, and use SiC (silicon carbide), a new material optimized for low-loss and miniaturization of power converters for the industry, such as inverters and converters for railway vehicles and photovoltaic inverters.
Details

You can narrow down the search for applicable products by selecting specifications.

Polarity
VDSS(V)
-100
1200
-
Package name (Toshiba)
RDS(ON)Max(Ω)|VGS|=10V
0.0003
5.9
-
RDS(ON)Max(Ω)|VGS|=4.5V
0.00084
4.7
-
RDS(ON)Max(Ω)|VGS|=2.5V
0.0027
40
-
AEC-Q101
(*) For more information please contact the sales representative.
Results:

You can narrow down your search for applicable products by package type or number of pins.

unit:
CST3C

Package Size

W : 0.8 mm
L : 0.6 mm
H : 0.38 mm
SOT-883 (CST3)

Package Size

W : 1.0 mm
L : 0.6 mm
H : 0.38 mm
SOT-723 (VESM)

Package Size

W : 1.2 mm
L : 1.2 mm
H : 0.5 mm
SOT-416 (SSM)

Package Size

W : 1.6 mm
L : 1.6 mm
H : 0.7 mm
SOT-323 (USM)

Package Size

W : 2.0 mm
L : 2.1 mm
H : 0.9 mm
1/48

All package dimensions are guaranteed in millimeters as mentioned on datasheet. Package dimension in inches is round to 2 significant digits converted with 1mm=0.0393701inch.

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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

Technical Articles

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Technical topics

Recommended Motor Control Products
Provide system solutions utilizing high-power electronic technology
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Reference Design

1.6kW LLC Resonant AC-DC Converter for Servers
In order to reduce power consumption in data centers, the bus voltage of servers is increasingly changing to 48V.This is the AC-DC converter for 48V servers. Equipped with Toshiba's latest generation of power MOSFETs and SiC diodes, it outputs 54.5V DC with high efficiency from 100V to 200V AC input.This reference design provides explanations of the design points, usage methods, and adjustment methods of each part of the circuit, as well as design information including circuit diagrams, board patterns, etc. which can be useful for your design.
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Automotive 3kW 48V-12V Bidirectional DC-DC Converter
In recent years, xEV (hybrid-electric vehicles and battery-powered electric vehicles) are becoming popular to reduce greenhouse-gas emissions. The xEV may have a 48V battery inside in addition to a 12V battery to reduce electrical power loss.This design is a bidirectional DC-DC converter required for the applications which have the 48V battery and the 12V battery. It achieves high efficiency operation by using Toshiba's automotive MOSFETs which have low on-resistance and high heat dissipation.Design tips on each portion of the circuit, method of operation, and design information such as circuit diagrams and PCB patterns are available, please use them for your design.
Details
Board Appearance
Inverter for Cordless Power Tool
The three-phase brushless DC motor drive circuit, which combines six MOSFETs (TPH1R204PB, TPH2R408QM) and a gate driver (TB67Z833SFTG), enables compact yet highly efficient motor control. It supports various input modes. This reference design provides design guide, data, and other contents.
Details
Automotive Brushed DC Motor Control Circuit Using TB9103FTG
The Automotive Brushed DC Motor Control Circuit Using TB9103FTG can control two motors in half-bridge mode or one motor in H-bridge mode. The Motor can be controlled using onboard switches or an external MCU. This reference design provides design guide, data, and other contents.
Details
This is a picture of Gate Drive for SiC MOSFET Module.
Gate Drive for SiC MOSFET Module
In recent years, SiC MOSFET modules have become popular compared to conventional IGBT modules as they have a smaller size and lower loss, which is useful in power conversion applications such as industrial motor drives and railway inverters. This is a gate drive circuit with various protection functions which can safely drive a SiC MOSFET module.This design uses the TLP5231 pre-driver coupler, which is capable of high-current gate drive with external buffer MOSFETs and has various built-in protection functions to implement the isolated-gate drive of a high-current/high-voltage SiC MOSFET module. It consists of two channels, high-side and low-side, on a 62mm x 100mm board and can be installed on Toshiba dual MOSFET modules. Design tips on each portion of the circuit, method of operation, and design information such as circuit diagrams and PCB patterns are available, please use them for your design.
Details

News / Latest information

20-05-2025

Toshiba Releases 650V 3rd Generation SiC MOSFETs in DFN8×8 Package

  • Products/Technology

26-07-2024

Toshiba Develops Technology that Can Mitigate Parasitic Oscillation Between Parallel-Connected Chips in SiC Power Modules with Minimal Gate Resistance that Support High Speed Switching

  • Products/Technology

03-06-2024

Toshiba Succeeds in Reducing On-resistance in SBD embedded SiC MOSFET While Securing Reliability and Short-Circuit Ruggedness

  • Products/Technology

23-08-2023

Lineup Expansion of 80 V N-Channel Power MOSFET Products in Toshiba’s U-MOSX-H Series that Help Reduce the Power Consumption of Power Supplies

  • Products/Technology

17-08-2023

Toshiba Launches Automotive 40V N-Channel Power MOSFETs with New Package that Contributes to High Heat Dissipation and Size Reduction of Automotive Equipment

  • Products/Technology

29-06-2023

Toshiba Releases 100V N-Channel Power MOSFET That Supports Miniaturization of Power Supply Circuits

  • Products/Technology
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