United States
Toshiba USA   Toshiba Americas   Toshiba Worldwide
Enter Search Term
Stock Check
 Quick Links
Sales Contacts
Product List
Product Support
Stock Check
Take Our Web Site Survey
Home  Products 
ASIC 40nm TC340

Process 40-nm node; low-k interconnect dielectrics and high-k gate dielectrics
Gate length 40 nm
Metal interconnect Up to 8-layer Cu + 1-layer Al
Core voltage Selectable from 1.1 V and 1.0 V.
I/O voltages 1.8 V/2.5 V/3.3 V
Gate density 2,100 kgates/mm2
Gate delay1 9.0 ps (High-speed type),12.0 ps (Low-power type)
Power dissipation2 0.59n W/MHz/gate
1 2-input NAND (X2); F/O = 2, wire load = 0
22-input NAND (X1); F/O = 1, wire load = 0, switching probability = 0.25