MLC and SLC Lineup of Asynchronous DDR NAND
for Fast Data Transfers
Toshiba offers a full lineup of 32nm DDR Toggle-Mode NAND,
in MLC versions with densities of 64Gb1, 128Gb and 256Gb and
SLC versions with densities of 32Gb, 64Gb and 128Gb. Toggle-Mode NAND
is a DDR NAND solution designed to consume less power than synchronous
DDR NAND flash by eliminating the clock signal typically used in synchronous
DDR memories.
Toshiba DDR Toggle-Mode 1.0 NAND has a fast interface,
rated at 133 megatransfers/second2 (MT/s), as compared to
40MT/s for legacy SLC single data rate NAN. This makes it suitable for
high performance solid state storage applications, including enterprise
storage.
With an asynchronous interface similar to that used in
conventional NAND, the Toggle-Mode DDR Flash NAND requires no clock signal,
which means that it uses less power and has a simpler system design when
compared to competing synchronous NAND alternatives. The DDR interface
in Toggle-Mode NAND uses a Bidirectional DQS to generate input/output
signals (I/Os) using the rising and falling edge of the write erase signal.
The bi-directional data signal also ensures scalability
to future higher frequency operations. Toshiba is working with JEDEC
on a new standard for the most advanced high-performance NAND flash memory,
a DDR NAND flash with a 400Mbps3 interface. This next generation
Toggle-Mode DDR NAND 2.0 is targeted to provide a three-fold increase
in interface speed over Toggle DDR 1.0, and a ten-fold increase over
the 40Mbps single data rate NAND that is widely used today.