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Electronic Ceramic Substrates

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Two Types of Ceramic Substrates

  Ceramic Substrates
Toshiba offers two basic types of ceramic substrates with a broad range of thermal, mechanical and physical properties. Both types of substrates are available with surfaces that can be either plain or with metallization deposited on or attached to the surface. They are ideally-suited for use as platforms for high power density, compact microelectronic circuits or as single or multiple chip heat sinks, where the significant amounts of heat generated must be effectively dissipated to ensure proper circuit function, improve reliability and extend meantime between failures. And both have thermal expansion coefficients that are close to and, therefore, quite compatible with the most commonly used semiconductor components.

Aluminum Nitride
High Thermal Conductivity Aluminum Nitride, 170, 200 & 230W/mK:
  • Plain, As Fired, or Highly Polished Surface
  • Nickel-plated Molybdenum or Tungsten Refractory Metalized Surface
  • Active Metal Copper Clad (AMC) Aluminum Nitride, Circuit Patterned or Full Face
Silicon Nitride
High Thermal Conductivity, High Strength Silicon Nitride, 90W/mK:
  • Plain Surface
  • Active Metal Copper Clad (AMC) Silicon Nitride, Circuit Patterned or Full Face

Please feel free to contact us to discuss your application and to receive detailed information on the product of interest. For further information please contact the  Advanced Materials Division of Toshiba America Electronic Components, Inc. For other product details,  please visit our affiliate Toshiba Materials Co., Ltd.

Three Levels of Thermal Conductivity

Toshiba's High Thermal Conductivity Aluminum Nitride Substrates are available in three
(3) different levels of thermal conductivity: 170, 200 & 230W/mK. Each grade is available with either As Fired (‹ 63uin Ra), Standard (‹ 32uin Ra), Polished (‹ 2uin) or Metalized surfaces. The metalized surfaces are typically Nickel-plated and can be patterned if they are to also serve as conductor elements in the circuit layout specified by the customer.

Toshiba's Silicon Nitride substrates, with a thermal conductivity rating of 90W/mK, at first glance appear significantly inferior to the Aluminum Nitride from a heat dissipation point of view. In reality, they can provide approximately the same thermal resistance. This is due to the fact that the Silicon Nitride Ceramic has almost twice the strength, measurably better fracture toughness and significantly higher stiffness. As a result of these superior mechanical properties, Silicon Nitride substrates can be half the thickness of Aluminum Nitride substrates in comparable designs. These impressive mechanical properties also make the Silicon Nitride substrates an excellent choice in applications where severe, repetitive thermal cycling of the circuit/package is present.

Plain surface Aluminum Nitride substrates of the following sizes and plain surface finish types are kept in stock at Toshiba America Electronic Components, Inc. and are available for immediate delivery. Other sizes and thicknesses of plain as well as metalized substrates are available typically in 6-8 weeks.