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Job Description

Req No: 3043
Location: San Jose, CA
Title: NAND Memory Analyst
Job Type: Full Time
Education Requirements: MS Electrical Engineering

Job Description

NAND Memory Analyst

  • You will be responsible for providing technical expertise and support on initiatives involving NAND Flash Memory (planar and 3D NAND)
  • In the use and deployment of NAND Flash in Enterprise storage solutions (SSDs, All Flash Arrays, Flash Appliances, etc). Knowledge of NAND deployment in Cloud, Hyper scale and Client storage solutions is considered a plus.
  • Leverage the technical expertise to enhance the design, characterization and specification of current and future NAND memory
  • In addition to technical expertise the Storage analyst will collaborate with Design Engineering and Applications to distill customer use cases, needs and requirements into memory level requirements
  • The candidate will work with key internal and external technical leaders and architects to influence Toshiba's NAND Flash strategy

  • Be the leader for enhancing Toshiba's NAND Flash for Enterprise, Hyperscale and Client solutions
  • Maintain deep knowledge of techniques to enhance NAND flash
  • Maintain strong knowledge of NAND Flash from competition and overall competitive NAND Flash landscape
  • Provide expert technical guidance for enhancing NAND characterization, improving technical documentation, and application notes
  • Be the expert for guiding NAND applications and development teams for most effective NAND flash optimizations
  • Be the expert for explaining how customers can extract improved PE cycles (Total bytes written), retention and other key NAND parameters from existing and future NAND geometries
  • EOE/AA M/F/D/V

    Required Experience:

  • The candidate will have strong understanding of using NAND characterization, statistics, test modes and other techniques deployed to enhance NAND Flash for Enterprise SSDs
  • The candidate will have a good understanding of ECC and advanced ECC techniques
  • Expert level understanding of NAND Flash memory operation, characteristics and limitations (PE cycles, retention, multiple levels, etc) together with techniques to push beyond these limitations
  • Strong knowledge of how NAND flash is used in various applications and end markets
  • Strong understanding of NAND parameter tradeoffs retention vs PE cycles, capacity vs PE cycles, etc
  • Ability to uncover business and technical challenges and propose solutions to address these challenges
  • Proven track record of working across disparate teams to accomplish goals

    Other Experience:

    Master in Electrical Engineering minimum requirement with MBA consider a plus

    You must apply through the Toshiba site to be considered an applicant for this role. Please do not just send your resume.

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