What happens when you go beyond 2D? You enable innovative designs. Toshiba's BiCS FLASH was the industry's first 48-layer 3D Flash memory1, and we've upped the ante by introducing 64-layer BiCS FLASH technology. Our cutting-edge 64-layer stacking process makes this powerful memory solution possible.
Going beyond 2D also solves problems. From the Internet of Things and social networking to media consumption at ever-higher resolutions, the volume of data generated worldwide is growing exponentially. All of this data needs to be processed, stored and managed. At the same time, enterprise applications and data centers are demanding more and more high density storage - with less power consumption. Stacking flash memory chips vertically is the answer.
Suitable for a wide range of high density storage applications, our 128Gb2 and 256Gb 3D Flash memories consume less power, improve endurance, increase power efficiency and offer higher density in a smaller footprint - when compared to Floating Gate technology.
Our TLC 3-bit-per-cell 256Gb (32GB) BiCS FLASH is an industry first3, and enhances the reliability of write/erase endurance while boosting write speeds. Its 3D stacked cell structure lends itself to enterprise and SSD applications, and its density of 256Gb is great news for consumer electronic devices such as smartphones and laptops.
Our strategy has always been a forward-thinking one: we focused on extending our leading Floating Gate technology - which features the world's smallest 15nm 128Gb die4 - while simultaneously developing a competitive, high density 3D memory solution. If you are working with applications requiring lower densities, never fear - we will continue to leverage our leading 15nm process to provide a cost-effective Floating Gate solution.
We'll also continue to push the boundaries of capacity for our NAND flash memory by shrinking the design rule and process technology nodes.
What sets BiCS FLASH apart?
Higher Density and Capacity
Our 3D flash memory stacking technology (we were the first in the world5 to announce this, by the way) gives BiCS FLASH far higher die area density compared to 2D NAND. BiCS FLASH reduces the chip size by optimizing both circuit technology and the manufacturing process.
The spaces between memory cells in BiCS FLASH are much wider than those in 2D NAND flash memory. The result? Programming speed is improved (by increasing the amount of data for a single programming sequence).
BiCS FLASH reduces cell coupling and improves reliability when compared to 2D NAND flash memory.
Uses Less Power
BiCS FLASH reduces the power consumption per unit of programming data by increasing the amount of data for a single programming sequence (when compared to 2D NAND flash memory).
1As of March 26, 2015. Toshiba survey.
2Definition of capacity: Toshiba defines a megabyte (MB) as 1,000,000 bytes, a gigabyte (GB) as 1,000,000,000 bytes and a terabyte (TB) as 1,000,000,000,000 bytes. A computer operating system, however, reports storage capacity using powers of 2 for the definition of 1GB =230= 1,073,741,824 bytes and therefore shows less storage capacity. Available storage capacity (including examples of various media files) will vary based on file size, formatting, settings, software and operating system, such as Microsoft Operating System and/or pre-installed software applications, or media content. Actual formatted capacity may vary.
3As of August 4, 2014. Toshiba survey.
4As of September 30th 2014. Toshiba survey. Excluding the 128GB product.
5"Bit Cost Scalable Technology with Punch and Plug Process for Ultra High Density Flash Memory" Toshiba Corporation, Semiconductor Company VLSI Symposium 2007.
BiCS FLASH is a trademark of Toshiba Corporation