TAEC's
new family of MOSFETs provide
both low RDSON and
fast switching
for use in power supplies for
synchronous DC-DC converter applications
in flat panel displays, servers,
desktop and
mobile
computers and portable electronics
devices.
The
new MOSFETs are based on Toshiba UMOS-V,
a fifth-generation ultra-high-speed
process technology that improves power
efficiency. There are eleven initial
members of the Toshiba UMOS-V family,
offered in four packages - SOP Advance,
SOP-8, TSSOP Advance and PS-8 - which
will provide a range of size and performance
to meet various application requirements.
High-and
Low-Side Power Efficiency
Better
power efficiency in both the high-and
low-side MOSFETs in a synchronous DC-DC
converter is made possible due to the
UMOS-V process improving many of the
key parameters. For the low-side MOSFET,
these include lower on-state resistance
(RDSON) and reduced
self-turn-on loss, achieved through
lower gate-to-drain capacitance, lower
gate resistance (RG), and optimized
gate threshold voltage.
Process
Technology Enables Faster Switching
For
the high-side MOSFET, the new process
technology enables faster switching,
achieved through lower gate charge
(QSW) and
lower gate resistance.
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