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| TOSHIBA SMALL SIGNAL MOSFETS FOR HIGH-SPEED SWITCHING IN PORTABLE ELECTRONICS ACHIEVE LOW ON-RESISTANCE AND CAPACITANCE |
| Broad S-MOS Family Suitable for Switching Applications or DC-DC Converters in Cellular Phones, Digital Cameras and other Mobile Electronic Devices |
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IRVINE,
Calif., Feb. 22, 2007 —Toshiba America Electronic
Components, Inc. (TAEC)* has expanded its power semiconductor
lineup with a broad selection of low ON-resistance small
signal MOSFETs (S-MOS) suitable for high-speed switching
devices or DC-DC converters in portable electronics equipment.
The MOSFETs feature among the lowest ON-resistance and lowest
capacitance in the industry in 2.8mm x 2.8mm and 1.6mm x
1.6mm packages and are designed to save space while meeting
designers’ requirements for smaller internal power loss and
lower operating voltage in medium output current range applications
such as laptop PCs, cellular phones, digital cameras and
audio players.
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Developed by Toshiba Corp. (Toshiba), the S-MOS family includes
17 six-pin devices (SSM6K- and SSM6J-) designed for 0.5 Amp
(A) to 2.5A load switching applications and DC-DC converters operating at
0.5 megahertz1 (MHz) to 1MHz, and 20 three-pin
devices (SSM3K- and SSM3J-) that are suitable for 0.5A to
4.0A switching devices. The six-pin devices,
with ON-resistance from 30 milliohms (mΩ) to 400mΩ,
are available in an ultra-small 1.6mm x 1.6mm x 0.55mm package
(ES6). The three-pin devices feature ON-resistance
from 100mΩ to 400mΩ and are offered in
a 2.8mm x 2.9mm x 0.7mm package (TSM). N- and
P-channel polarities are available in either package, designated
by K or J, respectively, in the part number. (See table
below.) |
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| To support a wide range of design
requirements, the six-pin S-MOS family includes N-channel
devices with drain source voltage of 20V or 30V and driving
voltage of 1.8V, 2.5V or 4V, and P-channel devices with -12V,
-20V or -30V drain source voltage, and driving voltage of
1.5V, 1.8V, 2.5V or 4V. The three-pin S-MOS family includes
N-channel devices with drain source voltage of 20V, 30V or
60V, and driving voltage of 1.8V, 2.5V or 4V, and P-channel
devices with -12V, -20V or -30V drain source voltage, and
driving voltage of 1.8V, 2.5V or 4V. |
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Advances in miniaturization of portable equipment are
increasingly driving design decisions. At Toshiba, we are working
to help our customers realize low capacitance and high speed
switching, with lower operating voltages and smaller power
losses, which translate into longer battery operation for their
designs,” said Homayoun Ghani, business development
manager, microwave, RF and small-signal products, for TAEC.
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Technical Specifications
Low ON-Resistance S-MOS (6-pin) in 1.6mm x 1.6mm Package (ES6)
P |
| Part
Number |
Polarity |
Drain
Source Voltage
VDSS (V) |
Gate
Source Voltage
VGSS (V) |
Drain
Current (max.)
Io (A) |
ON-resistance
RDS(ON) max(mΩ) |
Input Capacitance
CiSS (pF) |
VGS =1.5V |
VGS =1.8V |
VGS =2.5V |
VGS =4.0V |
| SSM6K203FE |
N-ch |
20 |
+10 |
2.9 |
155 |
108 |
78 |
63 |
400 |
| SSM6K202FE |
30 |
+12 |
2.3 |
- |
132 |
95 |
85 |
270 |
| SSM6K204FE |
20 |
+10 |
2.0 |
307 |
214 |
164 |
126 |
195 |
| SSM6K208FE |
30 |
+12 |
1.8 |
- |
276 |
185 |
140 |
125 |
| SSM6K25FE |
20 |
+12 |
0.5 |
- |
395 |
190 |
145 |
268 |
| SSM6K24FE |
30 |
+12 |
0.5 |
- |
- |
180 |
145 |
245 |
| SSM6K22FE |
20 |
+12 |
1.4 |
- |
- |
230 |
170 |
125 |
| SSM6K209FE |
30 |
+20 |
2.4 |
- |
- |
- |
152 |
320 |
| SSM6K30FE |
20 |
+20 |
1.2 |
- |
- |
- |
420 |
60 |
| SSM6K31FE |
20 |
+20 |
1.2 |
- |
- |
- |
540 |
36 |
| SSM6J53FE |
P-ch |
-20 |
+8 |
-1.8 |
364 |
204 |
136 |
- |
568 |
| SSM6J206FE |
-20 |
+8 |
-2.0 |
- |
320 |
186 |
130 |
335 |
| SSM6J205FE |
-20 |
+8 |
-0.8 |
- |
460 |
306 |
234 |
250 |
| SSM6J26FE |
-20 |
+8 |
-0.5 |
- |
980 |
330 |
230 |
250 |
| SSM6J23FE |
-12 |
+8 |
-1.2 |
- |
- |
210 |
160 |
420 |
| SSM6J25FE |
-20 |
+12 |
-0.5 |
- |
- |
430 |
260 |
218 |
| SSM6J207FE |
-30 |
+8 |
-1.3 |
- |
- |
- |
491 |
137 |
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Technical
Specifications
Low ON-Resistance S-MOS (3-pin) 2.8mm x 2.9mm Package (TSM) |
| Part Number |
Polarity |
Drain Source Voltage
VDSS (V) |
Gate Source Voltage
VGSS (V) |
Drain Current (max.)
Io (A) |
ON-resistance
RDS(ON) max(mΩ) |
Input Capacitance
CiSS (pF) |
VGS =1.5V |
VGS =1.8V |
VGS =2.5V |
VGS =4.0V |
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SSM3K310T |
Nch |
20 |
±10 |
5.0 |
66 |
43 |
32 |
28 |
1120 |
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SSM3K309T |
20 |
±12 |
4.7 |
- |
47 |
35 |
31 |
1020 |
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SSM3K301T |
20 |
±12 |
3.5 |
- |
110 |
74 |
56 |
320 |
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SSM3K302T |
30 |
±12 |
3.0 |
- |
131 |
87 |
71 |
270 |
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SSM3K01T |
30 |
±10 |
3.2 |
- |
- |
150 |
120 |
152 |
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SSM3K02T |
30 |
±10 |
2.5 |
- |
- |
250 |
200 |
115 |
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SSM3K311T |
30 |
±20 |
4.8 |
- |
- |
- |
43 |
910 |
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SSM3K14T |
30 |
±20 |
4.0 |
- |
- |
- |
67 |
460 |
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SSM3K303T |
30 |
±20 |
2.9 |
- |
- |
- |
120 |
180 |
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SSM3K308T |
60 |
±20 |
2.1 |
- |
- |
- |
181 |
248 |
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SSM3K12T |
30 |
±20 |
3.0 |
- |
- |
- |
175 |
120 |
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SSM3J13T |
Pch |
-12 |
±8 |
-3.0 |
- |
- |
95 |
70 |
890 |
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SSM3J312T |
-12 |
±8 |
-2.7 |
- |
237 |
142 |
91 |
550 |
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SSM3J304T |
-20 |
±8 |
-2.3 |
- |
297 |
169 |
127 |
335 |
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SSM3J313T |
-20 |
±8 |
-1.5 |
- |
614 |
354 |
290 |
174 |
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SSM3J01T |
-30 |
±10 |
-1.7 |
- |
- |
600 |
400 |
240 |
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SSM3J02T |
-30 |
±10 |
-1.5 |
- |
- |
700 |
500 |
150 |
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SSM3J14T |
-30 |
±20 |
-2.7 |
- |
- |
- |
170 |
413 |
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SSM3J306T |
-30 |
±20 |
-2.4 |
- |
- |
- |
225 |
280 |
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SSM3J305T |
-30 |
±20 |
-1.7 |
- |
- |
- |
477 |
137 |
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Pricing and Availability |
| Samples
of the new Toshiba small signal MOSFETs are scheduled to be
available in March 2007. These S-MOS devices range in price
from $0.05 to $0.14 each in sample quantities. |
| Toshiba’s Discrete Products |
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Since 1986, Toshiba Corp. has ranked as the top discrete
supplier on a worldwide basis, based on annual revenue from
international shipments of total discrete products. According
to the most recent annual report from market research firm
Gartner Dataquest (San Jose, CA),
Toshiba remained the top discrete semiconductor supplier and moved into fourth
place in overall semiconductor sales. (Source: “2005 Worldwide Semiconductor
Market Share Report,” Gartner, released April 2006). More specifically,
Toshiba is a leading supplier in a number of discreteproduct categories, including
power transistors, rectifiers and thyristors, LMOS logic, CMOS logic, optoelectronics,
small signal diodes and transistors. The company’s
discrete devices are designed to meet the growing demand
for high-performance and lower voltages in today’s
wireless telecommunications and consumer electronics applications,
while emphasizing its strength in the automotive and industrial
markets.
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| *About TAEC |
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Combining quality and flexibility with design engineering
expertise, TAEC brings a breadth of advanced, next-generation
technologies to its customers. This broad offering
includes
memory and flash memory-based storage solutions, a broad range of discrete devices,
displays, medical tubes, ASICs, custom SOCs, microprocessors, microcontrollers
and wireless components for the computing, wireless, networking, automotive and
digital consumer markets.
TAEC is an independent operating company owned by Toshiba America, Inc., a subsidiary
of Toshiba Corp. (Toshiba), Japan’s largest semiconductor manufacturer
and the world’s fourth largest semiconductor manufacturer. In more
than 130 years of operation, Toshiba has recorded numerous firsts and made many
valuable contributions to technology and society. For additional company
and product information, please visit TAEC’s website at chips.toshiba.com. For
technical inquiries, please e-mail Tech.Questions@taec.toshiba.com.
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Information in this press release, including
product pricing and specifications, content of services and
contact information, is current and believed to be accurate
on the date of the announcement, but is subject to change
without prior notice. Technical and application information
contained here is subject to the most recent applicable Toshiba
product specifications. In developing designs, please ensure
that Toshiba products are used within specified operating
ranges as set forth in the most recent Toshiba product specifications
and the information set forth in Toshiba’s "Handling Guide for
Semiconductor Devices," or "Toshiba Semiconductor Reliability
Handbook." This information is available at chips.toshiba.com or from your TAEC representative.
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