TOSHIBA TO LAUNCH 43nm SLC NAND FLASH MEMORY

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Introducing the industry’s largest density SLC NAND chip at 16Gb and enhanced SLC lineup

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IRVINE, Calif. and TOKYO, October 28, 2008 — Toshiba Corp. (Toshiba) and Toshiba America Electronic Components, Inc. (TAEC)*, its subsidiary in the Americas, today announced the launch of a new line-up of 43nm Single-Level Cell (SLC) NAND flash memory products available in densities ranging from 512Mbits¹ to 64Gbits² and in a total of 16 versions. The new range includes three products, 16Gb, 32Gb and 64Gb, which integrate 43nm monolithic 16Gb chips, the highest density SLC NAND chips available³ . The new devices will come to market from the first quarter of 2009.

SLC chips offer fast read and write times and support a large number of write and erase cycles. Toshiba developed the new SLC devices to meet diversifying applications, and its enhanced line-up offers support for mobile phones, office automation equipment, and servers, all of which require high levels of read and write speeds and reliability.

In recent years, Toshiba Corporation has promoted expansion of the NAND flash memory market by accelerating development of high density multi-level cell (MLC) chips to be used for high capacity data storage in such markets as memory cards and MP3 players. Production of SLC chips has been limited for Toshiba's 56nm and 70nm process technologies. In bringing a wider range of advanced SLC flash memories suitable for higher performance storage applications into its line-up, Toshiba aims to expand its selection of high-value added products for diverse embedded applications, and will promote mass production through the application of advanced process technology.

Product Number	Capacity	Package	Page Size	Mass Production
TH58NVG6S2EBA20	64Gb	BGA	Large Block	2009, 1Q
TH58NVG5S2EBA20	32Gb	BGA		2009, 1Q
TC58NVG4S2EBA00	16Gb	BGA		2009, 1Q
TC58NVG3S2ETA00	8Gb	TSOP I		2009, 2Q
TC58NVG2S3ETA00	4Gb	TSOP I
TC58NVG2S3EBAJX	4Gb	BGA
TC58NVG1S3ETA00	2Gb	TSOP I		2009, 1Q
TC58NVG1S3EBAJX	2Gb	BGA		2009, 2Q
TC58NVG0S3ETA00	1Gb	TSOP I	Large Block	2009, 2Q
TC58NVG0S3EBAJ5		BGA	Large Block	2009, 2Q
TC58DVG02A5TA00		TSOP I	Small Block	2009, 3Q
TC58DVG02A5BAJ5		BGA	Small Block	2009, 3Q
TC58NVM9S3ETA00	512Mb	TSOP I	Large Block	2009, 2Q
TC58NVM9S3EBAJW		BGA	Large Block	2009, 2Q
TC58DVM92A5TA00		TSOP I	Small Block	2009, 3Q
TC58DVM92A5BAJW		BGA	Small Block	2009, 3Q

Features of the new products

By applying leading edge 43nm process technology and advanced technology to increase data savings, the new products doubled in density compared to 56nm SLC products. This enables the new memories to be applied to products that require higher performance and reliability.
The writing speed is 2.5 times⁴ faster than comparable Toshiba MLC NAND flash memory.

16G bit product

Product Number	TC58NVG4S2EBA00
Density	16G bit
Power	3.3V
Program time	400ms/ page (Typ.)
Delete time	4ms/block (Typ.)
Access time	40 ms/(1st) 25nano second(Serial)
Size	14mm x 18mm

*About Toshiba Corp. and TAEC

Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributors and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, advanced materials, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless components that make possible today's leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.

Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's third largest semiconductor manufacturer ( Gartner, 2007 WW Semiconductor Revenue, April 2008). For additional company and product information, please visit http://www.toshiba.com/taec/.

¹When used herein in relation to memory density, gigabit and/or Gbit or Gb means 1,024x1,024x1,024 = 1,073,741,824 bits. Usable capacity may be less. For details, please refer to specifications.

²When used herein in relation to memory density, megabit and/or Mbit or Mb means 1,024x1,024 = 1,048,576 bits. Usable capacity may be less. For details, please refer to applicable product specifications.

³As of the date of this announcement

⁴Comparison between 16Gbit MLC and SLC products.

Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba’s "Handling Guide for Semiconductor Devices," or "Toshiba Semiconductor Reliability Handbook." This information is available at chips.toshiba.com or from your TAEC representative.

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