Toshiba America Research, Inc.
 
R&D News
 
Date Title
2009
09-29-2009

Toshiba To Complete Construction Of Carbon Capture Pilot Plant

09-29-2009 Leading Companies Form Mobile High-Definition Interface Working Group To Drive Industry Standard For Mobile Wired Connectivity
06-18-2009 NEC Electronics and Toshiba Extend Chip Technology Development Agreements with IBM
06-15-2009 Toshiba Develops a New High-k/Ge Gate Stack Technology for LSIs at 16 Nanometers (nm) Node and Beyond
04-17-2009 Toshiba and IBM Showcase MXF Flash Memory Video Server Integrated with MediaHub
02-11-2009 Toshiba Makes Major Advances in NAND Flash Memory with 3-bit-per-cell 32nm generation and with 4-bit-per-cell 43nm technology
02-09-2009 Toshiba Develops World's Highest-Bandwidth, Highest Density Non-volatile RAM
01-07-2009 Toshiba to Bring New Levels of Leading Edge Technologies at CES 2009
2008
12-18-2008 Toshiba develops cost-effective 32nm CMOS platform technology by advanced single exposure lithography
12-18-2008 Toshiba Establishes New Platform Technology for 40nm CMOS Process
12-17-2008 Toshiba, IBM, and AMD Develop World's Smallest FinFET SRAM Cell with High-k/Metal Gate
12-03-2008 Toshiba Corporation to build pilot plant for carbon dioxide capture technology
12-01-2008 Toshiba Inducted into Software Product Line Hall of Fame at Carnegie Mellon Software Engineering Institute
12-01-2008 Toshiba Announces Core320 – The First Worldwide Multi-Center Trial To Validate Dynamic Volume Ct Technology In A Clinical Setting (Toshiba Medical Systems Corporation)